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| SFH 310 SFH 310 FA Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA Area not flat 0.6 0.4 0.7 0.4 0.8 0.4 4.8 4.4 2.7 2.1 3.4 3.1 2.54 mm spacing 1.1 0.9 1.8 1.2 29.0 27.0 3.7 3.5 6.1 5.7 0.6 0.4 Collector/ Cathode Chip position GEX06710 o2.9 o2.7 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Features q Especially suitable for applications from Bereich von 400 nm bis 1100 nm (SFH 310) und bei 880 nm (SFH 310 FA) q Hohe Linearitat q 3 mm-Plastikbauform Anwendungen q Lichtschranken fur Gleich- und 400 nm to 1100 nm (SFH 310) and of 880 nm (SFH 310 FA) q High linearity q 3 mm plastic package Applications q Photointerrupters q Industrial electronics q For control and drive circuits Wechsellichtbetrieb q Industrieelektronik q "Messen/Steuern/Regeln" Semiconductor Group 1 03.96 1998-07-13 feof6653 feo06653 SFH 310 SFH 310 FA Typ Type SFH 310 SFH 310-2 SFH 310-3 SFH 310 FA SFH 310 FA-2 SFH 310 FA-3 Bestellnummer Ordering Code Q62702-P874 on request on request Q62702-P1673 on request on request Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle 2 mm vom Gehause, Lotzeit t 5 s Dip soldering temperature 2 mm distance from case bottom, soldering time t 5 s Lottemperatur bei Kolbenlotung Lotstelle 2 mm vom Gehause, Lotzeit t 3 s Iron soldering temperature 2 mm distance from case bottom, soldering time t 3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 55 ... + 100 260 Einheit Unit C C Top; Tstg TS TS 300 C VCE IC ICS Ptot RthJA 70 50 100 165 450 V mA mA mW K/W Semiconductor Group 2 1998-07-13 SFH 310 SFH 310 FA Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 10 V, E = 0 Fotostrom Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Symbol Symbol SFH 310 S max 780 Wert Value SFH 310 FA 880 nm nm Einheit Unit 470 ... 1070 740 ... 1070 A LxB LxW H 0.19 0.65 x 0.65 2.1 ... 2.7 0.19 0.65 x 0.65 2.1 ... 2.7 mm2 mm x mm mm 25 10 5 ( 100) 25 10 5 ( 100) Grad deg. pF nA CCE ICEO IPCE IPCE 0.4 4 0.4 - mA mA Semiconductor Group 3 1998-07-13 SFH 310 SFH 310 FA Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 310: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2 1) 1) Symbol Symbol -1 -2 Wert Value -3 -4 Einheit Unit IPCE IPCE tr, tf 0.4 ... 0.8 0.63 ... 1.25 1.0 ... 2.0 2.1 5 3.4 7 5.4 8 1.6 8.6 12 mA mA s VCEsat 150 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () Semiconductor Group 4 1998-07-13 SFH 310 SFH 310 FA TA = 25 C, = 950 nm Rel.spectr. sensitivity SFH 310, Srel = f () Rel. spectr. sensitivity SFH 310FA,Srel=f () Photocurrent, IPCE = f (Ee), VCE = 5 V 100 OHF02331 S rel % 80 60 40 20 0 400 600 800 1000 nm 1200 Total power dissipation Ptot = f (TA) 200 mW OHF00871 Photocurrent IPCE = f (VCE), Ee = Parameter Dark current ICEO = f (VCE), E = 0 P tot 160 120 80 40 0 0 20 40 60 80 C 100 TA Dark current ICEO = f (TA), VCE = 10 V, E = 0 Capacitance CCE = f (VCE), f = 1 MHz Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 oC PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 PCE 1.6 OHF01524 0 25 50 75 C 100 TA Semiconductor Group 5 1998-07-13 |
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